Atomic Layer Deposition

Atomic Layer Deposition (ALD) is a popular method used to grow thin film materials. Our lab has three growth chambers, two Thermal ALD chambers (one with Plasma enhancement), and one High Temperature ALD chamber.

 

Thermal and Plasma Enhanced Atomic Layer Deposition

Thermal ALD pictured on the left and Plasma Enhanced (PE) ALD pictured on the right. These chambers allow us to grow thin film material such as Zinc Oxide, Aluminum Oxide, Aluminum Nitride, Tin Oxide, and more!

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High Temperature Atomic Layer Deposition

A problem we sought to overcome was temperature limiting our growths so we built a chamber capable of temperatures greater than 800°c! We are currently exploring the growth of Gallium Nitride at high temperatures. We intend to use this chamber to research and develop other thin film materials.